MOS TRANSISTORS

3.00 points · University catalogue

Lect: 2. Operation and modeling of MOS transistors. MOS two- and three-terminal structures. The MOS transistor as a four-terminal device; general charge-sheet modeling; strong, moderate, and weak inversion models; short-and-narrow-channel effects; ion-implanted devices; scaling considerations in VLSI; charge modeling; large-signal transient and small-signal modeling for quasistatic and nonquasistatic operation