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3.43

Integrated Microelectronic Devices

4-0-8 units · Graduate

See description under subject 6.6500J.

Spring 2007

6.720 examines the physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics covered include: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. The course emphasizes physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling are also outlined. The course is worth 2 Engineering Design Points. Acknowledgments --------------- Prof. Jesús del Alamo would like to thank Prof. Harry Tuller for his support of and help in teaching the course.

Readings

  • del Alamo, Jesús A. Integrated Microelectronic Devices: Physics and Modeling. (In preparation.) To be distributed in lecture.
    Required
  • Muller, Richard S., Theodore I. Kamins, and Mansun Chan. Device Electronics for Integrated Circuits . 3rd ed. New York, NY: John Wiley & Sons, 2002. ISBN: 9780471593980.
    Listed reading
  • Pierret, Robert F. Semiconductor Device Fundamentals . Reading, MA: Addison Wesley, 1996. ISBN: 9780201543933.
    Listed reading
  • Streetman, Ben G. Solid State Electronics Devices . 4th ed. Upper Saddle River, NJ: Prentice Hall, 1995. ISBN: 9780131587670.
    Listed reading
  • McKelvey, John P. Solid State and Semiconductor Physics . Melbourne, FL: Krieger Pub Co, 1982. ISBN: 9780898743968.
    Listed reading
  • Tsividis, Yannis P. Operation and Modeling of the MOS Transistor . 2nd ed. New York, NY: McGraw-Hill, 1987. ISBN: 9780070653818.
    Listed reading
  • The course readings are taken from the required textbook by Prof. Jesús del Alamo.
    Listed reading
  • SES #: L1 · TOPICS: 6.720 overview; fundamental concepts · READINGS: Chapter 1
    Reading assignment
  • SES #: L2 · TOPICS: Intrinsic, extrinsic semiconductors; conduction and valence band density of states (DOS) · READINGS: Chapter 2, sections 2.1-2.4 (2.4.1)
    Reading assignment
  • SES #: L3 · TOPICS: Carrier statistics in semiconductors; Fermi level · READINGS: Chapter 2, sections 2.4-2.6
    Reading assignment
  • SES #: L4 · TOPICS: Generation and recombination mechanisms; equilibrium rates · READINGS: Chapter 3, sections 3.1-3.4
    Reading assignment
  • SES #: L5 · TOPICS: Generation and recombination rates outside equilibrium · READINGS: Chapter 3, sections 3.4-3.7
    Reading assignment
  • SES #: L6 · TOPICS: Carrier dynamics; thermal motion · READINGS: Chapter 4, sections 4.1-4.3
    Reading assignment
  • SES #: L7 · TOPICS: Drift; diffusion; transit time · READINGS: Chapter 4, section 4.5
    Reading assignment
  • SES #: L8 · TOPICS: Non-uniform doping distribution · READINGS: Chapter 4, section 4.6; Chapter 5, sections 5.1 and 5.2
    Reading assignment
  • SES #: L9 · TOPICS: Quasi-Fermi levels; continuity equations · READINGS: Chapter 5, sections 5.3-5.5
    Reading assignment
  • SES #: L10 · TOPICS: Shockley equations; majority-carrier type situations · READINGS: Chapter 5, section 5.6
    Reading assignment
  • SES #: L11 · TOPICS: Minority-carrier type situations: statics · READINGS: Chapter 5, section 5.4
    Reading assignment
  • SES #: L12 · TOPICS: Minority-carrier dynamics; space-charge and high-resistivity (SCR) transport; carrier multiplication · READINGS: Chapter 5, section 5.7
    Reading assignment
  • SES #: L13 · TOPICS: PN junction: electrostatics in and out of equilibrium · READINGS: Chapter 7, sections 7.1 and 7.2 (7.2.1, 7.2.2)
    Reading assignment
  • SES #: L14 · TOPICS: PN junction: depletion capacitance; current-voltage (I-V) characteristics · READINGS: Chapter 7, section 7.2 (7.2.3)
    Reading assignment
  • SES #: L15 · TOPICS: PN junction: carrier storage; diffusion capacitance; PN diode: parasitics · READINGS: Chapter 6, sections 6.2 (6.2.4) and 6.3
    Reading assignment
  • SES #: L16 · TOPICS: PN junction dynamics; PN diode: non-ideal and second-order effects · READINGS: Chapter 6, section 6.4
    Reading assignment
  • SES #: L17 · TOPICS: Metal-semiconductor junction electrostatics in and out of equilibrium; capacitance-voltage (C-V) characteristics · READINGS: Chapter 7, sections 7.1 and 7.2
    Reading assignment
  • SES #: L18 · TOPICS: Metal semiconductor junction I-V characteristics · READINGS: Chapter 7, section 7.2.3
    Reading assignment
  • SES #: L19 · TOPICS: Schottky diode; equivalent-circuit model; ohmic contacts · READINGS: Chapter 7, sections 7.3-7.5
    Reading assignment
  • SES #: L20 · TOPICS: Ideal semiconductor surface · READINGS: Chapter 8, sections 8.1-8.2 (8.2.1-8.2.2)
    Reading assignment
  • SES #: L21 · TOPICS: Metal-oxide-semiconductor (MOS) in equilibrium · READINGS: Chapter 8, sections 8.2 (8.2.3, 8.2.4) and 8.3 (8.3.1)
    Reading assignment
  • SES #: L22 · TOPICS: MOS outside equilibrium; Poisson-Boltzmann formulation · READINGS: Chapter 8, section 8.3 (8.3.2-8.3.4)
    Reading assignment
  • SES #: L23 · TOPICS: Simplifications to Poisson-Boltzmann formulation · READINGS: Chapter 8, sections 8.3 (8.3.5) and 8.4 (8.4.1, 8.4.2)
    Reading assignment
  • SES #: L24 · TOPICS: Dynamics of MOS structure: C-V characteristics; three-terminal MOS · READINGS: Chapter 8, sections 8.5-8.6; Chapter 9, section 9.1
    Reading assignment
  • SES #: L25 · TOPICS: Inversion layer transport · READINGS: Chapter 9, sections 9.2-9.4 (9.4.1, 9.4.2)
    Reading assignment
  • SES #: L26 · TOPICS: Long-channel metal-oxide-semiconductor field-effect (MOSFET): I-V characteristics · READINGS: Chapter 9, sections 9.4 (9.4.3-9.4.5) and 9.5
    Reading assignment
  • SES #: L27 · TOPICS: I-V characteristics (cont.): body effect, back bias · READINGS: Chapter 9, sections 9.5 (9.5.2) and 9.6
    Reading assignment
  • SES #: L28 · TOPICS: I-V characteristics (cont.): channel-length modulation, sub threshold regime · READINGS: Chapter 9, section 9.7
    Reading assignment
  • SES #: L29 · TOPICS: C-V characteristics; small-signal equivalent circuit models · READINGS: Chapter 9, sections 9.7.3 and 9.7.4
    Reading assignment
  • SES #: L30 · TOPICS: Short-channel MOSFET: short-channel effects · READINGS: Ko, P. K. “Approaches to Scaling.”
    Reading assignment
  • SES #: L31 · TOPICS: MOSFET short-channel effects (cont.) · READINGS: Ko, P. K. “Approaches to Scaling.”
    Reading assignment
  • SES #: L32 · TOPICS: MOSFET scaling · READINGS: Ko, P. K. “Approaches to Scaling.”
    Reading assignment
  • SES #: L34 · TOPICS: Bipolar junction transistor (BJT) intro; basic operation · READINGS: Chapter 11, sections 11.1 and 11.2 (11.2.1)
    Reading assignment
  • SES #: L35 · TOPICS: BJT I-V characteristics in forward-active · READINGS: Chapter 11, section 11.2 (11.2.1)
    Reading assignment
  • SES #: L36 · TOPICS: Other regimes of operation of BJT · READINGS: Chapter 11, sections 11.2 (11.2.5), 11.3, and 11.4 (11.4.1)
    Reading assignment
  • SES #: L37 · TOPICS: BJT C-V characteristics; small-signal equivalent circuit models · READINGS: Chapter 11, section 11.4.2
    Reading assignment
  • SES #: L38 · TOPICS: BJT high-frequency characteristics · READINGS: Chapter 11, section 11.5 (11.5.1, 11.5.3, 11.5.4, 11.5.5 but only qualitatively)
    Reading assignment

Prerequisites & course information

Same subject as 6.6500J Prereq: 3.42 or 6.2500[J] G (Fall) 4-0-8 units

Sources