6.012
Microelectronic Devices and Circuits
Fall 2009
Topics
- Introduction to semiconductors, doping, generation/recombination, TE carrier concentrations. Carrier dynamics and transport: drift.
- Excess populations and minimum carrier lifetime, photoconductivity. Non-uniform concentrations and diffusion. Fick’s first and second laws.
- The five basic equations. Device structures in TE: carriers and electrostatic potential; the 60 mV rule. Poisson’s equation (PE).
- P-n junctions in thermal equilibrium and under reverse bias, the depletion approximation (DA), comparison to PE solution.
- Review reverse biased junctions. Consider forward bias and the special case of minority carrier injection into quasineutral regions.
- Forward biased p-n junctions: carrier injection, i-v characteristics (ideal and real; forward and reverse). Engineering carrier injection.
- Bipolar junction transistors: two coupled diodes, terminal characteristics, regions of operation
- Solar cells and LEDs (light emitting diodes).
- MOS capacitors: the DA applied to two-terminal MOS capacitor accumulation, depletion, and inversion; V FB , V T , Q A , and Q N
- The three-terminal MOS capacitor. MOSFETs: begin gradual channel approximation (GCA) using DA and ignoring subthreshold carriers.
- Complete GC/DA model for i DS : saturation, channel length modulation. Output characteristics; regions of operation.
- Subthreshold operation of MOSFETs. Development of model; compare to full numerical solution. Compare to/contrast with BJTs.
- Linear equivalent circuits for MOSFETs and BJTs at low and high frequency; transconductance of subthreshold MOSFETs.
- Logic inverter basics. Introduction to CMOS: transfer characteristics, noise margins, optimal device sizing.
- CMOS analysis, continued: switching delays, power dissipation, speed/power trade-offs.
- CMOS analysis, continued: subthreshold leakage, scaling rules, and where it is all going.
- Linear amplifier basics: performance metrics, current source biasing, current mirrors, mid-band range, two-port representation.
- Single-transistor building block stages: common-source, common-gate, and common-drain (follower) stages; characteristics and features.
- Differential amplifiers: large signal transfer characteristics; small signal analysis using common- and difference-mode inputs.
- Multi-stage amplifiers I: cascading diff stages; current source biasing; output stages.
- Multi-stage amplifiers II: active loads, biasing for maximum gain, input and output swings.
- Multi-stage amplifiers III: examples, stage selection, speciality stages, looking at a commercial op-amp schematic. Begin frequency response.
- Frequency response of CS amplifiers, the Miller effect. Intrinsic frequency limitations of MOSFETs. Biasing to maximize speed, power trade-off.
- OCTC method for estimating frequency response. Subthreshold amplifiers for ultra-lower power electronics, frequency performance.
- MOS imagers. Semester wrap-up; life after 6.012.
Readings
- The assigned readings are from the course textbook:
- LEC #: 1 · TOPICS: Introduction to semiconductors, doping, generation/recombination, TE carrier concentrations. Carrier dynamics and transport: drift. · READINGS: Chapter 1; Chapter 2; Section 3.1
- LEC #: 2 · TOPICS: Excess populations and minimum carrier lifetime, photoconductivity. Non-uniform concentrations and diffusion. Fick’s first and second laws. · READINGS: Chapter 3; Section 4.1
- LEC #: 3 · TOPICS: The five basic equations. Device structures in TE: carriers and electrostatic potential; the 60 mV rule. Poisson’s equation (PE). · READINGS: Sections 4.2 and 4.3; Chapter 6
- LEC #: 4 · TOPICS: P-n junctions in thermal equilibrium and under reverse bias, the depletion approximation (DA), comparison to PE solution. · READINGS: Sections 7.1 and 7.2
- LEC #: 5 · TOPICS: Review reverse biased junctions. Consider forward bias and the special case of minority carrier injection into quasineutral regions. · READINGS: Section 5.1
- LEC #: 6 · TOPICS: Forward biased p-n junctions: carrier injection, i-v characteristics (ideal and real; forward and reverse). Engineering carrier injection. · READINGS: Section 7.3
- LEC #: 7 · TOPICS: Bipolar junction transistors: two coupled diodes, terminal characteristics, regions of operation · READINGS: Section 8.1
- LEC #: 8 · TOPICS: Solar cells and LEDs (light emitting diodes). · READINGS: Sections 7.5 and 7.6
- LEC #: 9 · TOPICS: MOS capacitors: the DA applied to two-terminal MOS capacitor accumulation, depletion, and inversion; V FB , V T , Q A , and Q N · READINGS: Sections 9.1, 9.2, 9.3, and 9.4
- LEC #: 10 · TOPICS: The three-terminal MOS capacitor. MOSFETs: begin gradual channel approximation (GCA) using DA and ignoring subthreshold carriers. · READINGS: Sections 9.3 and 9.4; Section 10.1.1 (a)
- LEC #: 11 · TOPICS: Complete GC/DA model for i DS : saturation, channel length modulation. Output characteristics; regions of operation. · READINGS: Section 10.1.1 (a)
- LEC #: 13 · TOPICS: Linear equivalent circuits for MOSFETs and BJTs at low and high frequency; transconductance of subthreshold MOSFETs. · READINGS: Section 10.1.2 (a) and (c)
- LEC #: 14 · TOPICS: Logic inverter basics. Introduction to CMOS: transfer characteristics, noise margins, optimal device sizing. · READINGS: Section 15.1
- LEC #: 15 · TOPICS: CMOS analysis, continued: switching delays, power dissipation, speed/power trade-offs. · READINGS: Section 15.2.4
- LEC #: 17 · TOPICS: Linear amplifier basics: performance metrics, current source biasing, current mirrors, mid-band range, two-port representation. · READINGS: Sections 11.1 and 11.2
- LEC #: 18 · TOPICS: Single-transistor building block stages: common-source, common-gate, and common-drain (follower) stages; characteristics and features. · READINGS: Section 11.4
- LEC #: 19 · TOPICS: Differential amplifiers: large signal transfer characteristics; small signal analysis using common- and difference-mode inputs. · READINGS: Sections 12.1, 12.2, and 12.3
- LEC #: 20 · TOPICS: Multi-stage amplifiers I: cascading diff stages; current source biasing; output stages. · READINGS: Sections 12.4 and 12.5
- LEC #: 21 · TOPICS: Multi-stage amplifiers II: active loads, biasing for maximum gain, input and output swings. · READINGS: Chapter 13
- LEC #: 22 · TOPICS: Multi-stage amplifiers III: examples, stage selection, speciality stages, looking at a commercial op-amp schematic. Begin frequency response. · READINGS: Chapter 13; Section 14.2.1
- LEC #: 23 · TOPICS: Frequency response of CS amplifiers, the Miller effect. Intrinsic frequency limitations of MOSFETs. Biasing to maximize speed, power trade-off. · READINGS: Sections 14.2.2 and 14.3
- LEC #: 24 · TOPICS: OCTC method for estimating frequency response. Subthreshold amplifiers for ultra-lower power electronics, frequency performance. · READINGS: Section 14.1
- Howe, Roger, and Charles Sodini. Microelectronics: An Integrated Approach . Upper Saddle River, NJ: Prentice Hall, 1996. ISBN: 9780135885185.
Spring 2009
6.012 is the header course for the department's "Devices, Circuits and Systems" concentration. The topics covered include: modeling of microelectronic devices, basic microelectronic circuit analysis and design, physical electronics of semiconductor junction and metal-on-silicon (MOS) devices, relation of electrical behavior to internal physical processes, development of circuit models, and understanding the uses and limitations of various models. The course uses incremental and large-signal techniques to analyze and design bipolar and field effect transistor circuits, with examples chosen from digital circuits, single-ended and differential linear amplifiers, and other integrated circuits.
Readings
- Howe, Roger, and Charles Sodini. Microelectronics: An Integrated Approach . Upper Saddle River, NJ: Prentice Hall, 1996. ISBN: 9780135885185.
- Fonstad, Clifton. Microelectronic Devices and Circuits . New York, NY: McGraw-Hill, 1994. ISBN: 9780070214965.
- Sedra, Adel, and Kenneth Smith. Microelectronic Circuits . New York, NY: Oxford University Press, 2007. ISBN: 9780195338836.
- Horenstein, Mark. Microelectronic Circuits and Devices . New York, NY: Pearson, 1996. ISBN: 9780536846761.
- The readings given below refer to sections in the course textbook:
- Howe, Roger, and Charles Sodini. Microelectronics: An Integrated Approach . Upper Saddle River, NJ: Prentice Hall, 1996. ISBN: 9780135885185.
- LEC #: 2 · TOPICS: Intrinsic semiconductors, electrons and holes, bond model, generation recombination and thermal equilibrium; doping, donors, acceptors, compensation · READINGS: 2.1-2.2
- LEC #: 3 · TOPICS: Carrier transport, drift velocity, drift current density, diffusion current density · READINGS: 2.4
- LEC #: 4 · TOPICS: The p-n junction, carrier concentration and potential in thermal equilibrium, 60mV rule · READINGS: 3.2-3.3
- LEC #: 5 · TOPICS: The p-n junction in thermal equilibrium · READINGS: 3.4
- LEC #: 6 · TOPICS: Introduction to the MOS structure, MOS capacitor in thermal equilibrium · READINGS: 3.7
- LEC #: 7 · TOPICS: MOS capacitor under applied bias; accumulation, depletion, and inversion regions · READINGS: 3.8
- LEC #: 8 · TOPICS: MOSFET physical structure, circuit symbol and terminal characteristics, MOS transistor characteristics · READINGS: 4.1-4.3
- LEC #: 9 · TOPICS: MOS transistor, backgate effect, MOSFET in saturation · READINGS: 4.4
- LEC #: 10 · TOPICS: MOSFET small-signal model · READINGS: 4.5
- LEC #: 11 · TOPICS: Digital logic concepts, inverter characteristics, logic levels and noise margins, transient characteristics, inverter circuits, NMOS/resistor loads · READINGS: 5.1-5.2
- LEC #: 12 · TOPICS: NMOS/current source load, CMOS inverter, static analysis · READINGS: 5.3-5.4
- LEC #: 13 · TOPICS: CMOS inverter, propagation delay model, static CMOS gates · READINGS: 5.5
- LEC #: 14 · TOPICS: p-n junction diode terminal characteristics, minority carrier concentration under forward and reverse bias · READINGS: 6.1-6.3
- LEC #: 15 · TOPICS: Short base approximation, steady state diffusion equation with currents in p-n junction · READINGS: 6.3
- LEC #: 16 · TOPICS: p-n junction diode circuit model, large signal static model, small signal model, diffusion capacitance · READINGS: 6.4
- LEC #: 17 · TOPICS: Introduction of bipolar junction transistor, terminal characteristics, forward active bias, current gain · READINGS: 7.1-7.2
- LEC #: 18 · TOPICS: Reverse active mode and saturation, the Ebers-Moll model · READINGS: 7.3-7.4
- LEC #: 19 · TOPICS: Single stage amplifiers, two port small signal model, common source amplifier with resistor and current source supply · READINGS: 8.1-8.6
- LEC #: 20 · TOPICS: Common base/gate amplifier, common collector/drain · READINGS: 8.8-8.9
- LEC #: 21 · TOPICS: Review frequency domain analysis; current gain frequency response of common emitter amplifier · READINGS: 10.1-10.3
- LEC #: 22 · TOPICS: Voltage gain frequency response of common emitter amplifier, full analysis of common emitter, the Miller approximation · READINGS: 10.4
- LEC #: 23 · TOPICS: Open circuit time constant analysis, common-gate (CG) and common-drain (CD) amplifiers · READINGS: 10.5-10.6
- LEC #: 24 · TOPICS: Multistage amplifiers, cascading small signal two port models · READINGS: 9.1-9.2
- LEC #: 25 · TOPICS: DC coupling, voltage sources, MOS current sources, current sources and sinks · READINGS: 9.4
- LEC #: 26 · TOPICS: Analyzing complex circuits and course wrap-up · READINGS: 9.6 and 10.7
Fall 2005
Topics
- Basic MOSFET Description
- Overview of 6.012
- WebLab Tutorial
- Introduction to Semiconductors: Electrons and Holes, Donors and Acceptors
- Examples of Carrier Statistics
- Carrier Transport: Drift and Diffusion
- Examples of Drift (Integrated Resistor, Resistor Design), Diffusion
- Electrostatics in Semiconductors
- Examples of QN Situation in Thermal Equilibrium
- p-n Junction Electrostatics in Thermal Equilibrium
- Examples of Electrostatics of p-n Junction in Thermal Equilibrium
- p-n Junction Electrostatics under Bias, Depletion Capacitance
- Examples of p-n Junction under Bias, Depletion Capacitance
- MOS Electrostatics at 0 V
- Examples of Electrostatics of MOS at 0 V
- MOS Electrostatics under Bias, MOS Capacitance
- Examples of MOS under Bias, C-V Characteristics
- MOSFET: I-V Characteristics (Qualitative, Linear)
- Examples of MOSFET: I-V Characteristics
- MOSFET: I-V Characteristics (Saturation, Back Bias)
- More Examples of MOSFET: I-V Characteristics
- MOSFET Equivalent Circuit Models
- Examples of MOSFET Equivalent Circuit Models including SPICE Model
- Logic Concepts
- Inverter Examples
- CMOS Inverter
- More Inverter Examples
- CMOS Inverter (cont.)
- Dynamic Power of CMOS Inverter
- p-n Junction Diode I-V Characteristics
- Examples of p-n Junction Diode I-V Characteristics
- p-n Junction Equivalent Circuit Models, Charge Storage, Diffusion Capacitance
- Examples of p-n Diode Equivalent Circuit Models
- BJT Electrostatics, Forward Active Regime
- Examples of BJT in Forward Active Regime
- Other Regimes of Operation of BJT
- Single-stage Amplifiers
- Other MOSFET Amplifier Stages
- BJT Single-stage Amplifiers
- Multistage Amplifiers
- Examples of Multistage Amplifiers
- Current Sources and Sinks
- Cascode Current Source
- Frequency Response of Common-source Amplifier
- Discussion on Design Project
- Miller Effect, Open-circuit Time Constant Technique
- Examples of Open-circuit Time Constant Technique (Common-emitter Stage)
- Frequency Response of other Amplifier Stages
- Frequency Response of Cascode Stage
- 6.012 Wrap-up: Key Conclusions
- 6.012 Wrap-up
Readings
- All reading are in the course textbook: Howe, R. T., and C. G. Sodini. Microelectronics: An Integrated Approach . Upper Saddle River, NJ: Prentice Hall, 1996. ISBN: 0135885183.
- Ses #: L1 · Topics: Overview of 6.012 · Readings: Chapter 1
- Ses #: L2 · Topics: Introduction to Semiconductors: Electrons and Holes, Donors and Acceptors · Readings: Chapter 2, sections 2.1-2.3
- Ses #: L3 · Topics: Carrier Transport: Drift and Diffusion · Readings: Chapter 2, sections 2.4-2.6
- The “60 mV Rule” Chapter 3, sections 3.1-3.2
- Ses #: L5 · Topics: p-n Junction Electrostatics in Thermal Equilibrium · Readings: Chapter 3, sections 3.3-3.4
- Ses #: L6 · Topics: p-n Junction Electrostatics under Bias, Depletion Capacitance · Readings: Chapter 3, sections 3.5-3.6
- Ses #: L7 · Topics: MOS Electrostatics at 0 V · Readings: Chapter 3, sections 3.7-3.8
- Ses #: L8 · Topics: MOS Electrostatics under Bias, MOS Capacitance · Readings: Chapter 3, sections 3.8-3.9
- Ses #: L9 · Topics: MOSFET: I-V Characteristics (Qualitative, Linear) · Readings: Chapter 4, sections 4.1-4.3
- Ses #: L10 · Topics: MOSFET: I-V Characteristics (Saturation, Back Bias) · Readings: Chapter 4, section 4.4
- Ses #: L11 · Topics: MOSFET Equivalent Circuit Models · Readings: Chapter 4, sections 4.5-4.6
- NMOS Inverter Chapter 5, sections 5.1-5.3.2
- Transfer Characteristics Chapter 5, section 5.3
- CMOS Scaling, VLSI Chapter 5, section 5.4
- Ses #: L15 · Topics: p-n Junction Diode I-V Characteristics · Readings: Chapter 6, sections 6.1-6.3
- Ses #: L16 · Topics: p-n Junction Equivalent Circuit Models, Charge Storage, Diffusion Capacitance · Readings: Chapter 6, sections 6.4-6.5 and 6.9
- Ses #: L17 · Topics: BJT Electrostatics, Forward Active Regime · Readings: Chapter 7, sections 7.1-7.2
- Equivalent Circuit Models Chapter 7, sections 7.3-7.4
- Common-source Amplifier Stage Chapter 8, sections 8.1-8.6
- Ses #: L20 · Topics: Other MOSFET Amplifier Stages · Readings: Chapter 8, sections 8.7-8.9
- Ses #: L21 · Topics: Multistage Amplifiers · Readings: Chapter 9, sections 9.1-9.3
- Ses #: L22 · Topics: Current Sources and Sinks · Readings: Chapter 9, section 9.4
- Ses #: L23 · Topics: Frequency Response of Common-source Amplifier · Readings: Chapter 10, sections 10.1-10.4
- Ses #: L24 · Topics: Miller Effect, Open-circuit Time Constant Technique · Readings: Chapter 10, sections 10.4.4-10.4.5 and 10.6
- Ses #: L25 · Topics: Frequency Response of other Amplifier Stages · Readings: Chapter 9, section 9.3.3; Chapter 10, sections 10.5 and 10.7
- Howe, R. T., and C. G. Sodini. Microelectronics: An Integrated Approach . Upper Saddle River, NJ: Prentice Hall, 1996. ISBN: 0135885183.
- Fonstad, C. G. Microelectronic Devices and Circuits . New York, NY: McGraw-Hill, 1994. ISBN: 0070214964.
- Sedra, A. S., and K. C. Smith. Microelectronic Circuits . 4th ed. New York, NY: Oxford University Press, 1998. ISBN: 0195116631.
- Pierret, R. F. Semiconductor Device Fundamentals . Upper Saddle River, NJ: Prentice Hall, 1995. ISBN: 0201543931.
Sources
- Course catalogue ↗Historical OpenCourseWare
- MIT OpenCourseWare ↗Fall 2009
- MIT OCW calendar ↗
- MIT OCW readings ↗
- MIT OCW syllabus ↗
- MIT OpenCourseWare ↗Spring 2009
- MIT OCW syllabus ↗
- MIT OCW readings ↗
- MIT OCW readings ↗
- MIT OCW calendar ↗
- MIT OCW syllabus ↗
- Historical MIT OpenCourseWare offering. Named reading entries and schedule topics are automatically extracted from the linked source pages.
- Historical MIT OpenCourseWare offering. Named reading entries and schedule topics are automatically extracted from the linked source pages.
- Historical MIT OpenCourseWare offering. Named reading entries and schedule topics are automatically extracted from the linked source pages.