6.701
Introduction to Nanoelectronics
Spring 2010
Topics
- The motivation for nanoelectronics, device scaling
- Review of waves, phase and interference, wavefunctions
- Wavepackets and operators
- Momentum, energy and the uncertainty principle
- Schrödinger equation, particle in a box
- Piecewise potentials, tunneling
- Fermi statistics, current, metals and insulators
- Density of states, periodic boundary conditions
- Density of states in 0-d to 3-d structures
- Equilibrium in two terminal molecular devices
- Capacitance models of electrostatics
- Current flow under bias in two terminal molecular devices
- Charging
- Numerical methods for self-consistent IV calculations
- Current flow in quantum wires, the quantum limit of conductance
- Landauer theory
- Midterm (covering Parts I-III)
- Ohm’s law and the Drude model
- Field effect transistors (FETs)
- Review of three terminal device electrostatics
- Ballistic quantum wire FETs
- Conventional MOSFETs
- Review ballistic FETs
- CMOS, power delay product and scaling
- Review of CMOS
- Thermodynamic limits and reversible computing
- Hybrid orbitals, introduction to tight binding
- Examples of tight binding calculations
- Periodic materials, Bloch functions
- Semiconductors and insulators
- Tight binding in periodic materials
- Carbon nanotubes
Readings
Sources
- Course catalogue ↗Historical OpenCourseWare
- MIT OCW calendar ↗
- MIT OCW syllabus ↗
- Historical MIT OpenCourseWare offering. Named reading entries and schedule topics are automatically extracted from the linked source pages.