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Compound Semiconductor Devices

Graduate · Historical course

Spring 2003

Topics

  • Compound Semiconductors : The families (III-V’s, II-VI’s, IV-VI’s, IV-IV’s), alloys, E g vs a; band structures (E vs k; Γ, L, X minima; direct vs. indirect gaps); crystal lattices, electrical properties, optical properties; trends in properties and the periodic table. The useful compounds.
  • Metal-Semiconductor Interfaces (Schottky Barriers) : The compound semiconductor surface; Fermi level pinning. Theories of barrier formation and of current flow; diffusive vs. ballistic flow; contrasts with p-n diodes. Theory and practice of ohmic contacts.
  • Heterostructures : E-x Profiles: ΔE c , ΔE v , E c (x), E v (x); n o (x), p o (x); modulation doping. Conduction parallel to heterojunction; mobility in semiconductors and carrier scattering mechanisms.
  • Heterojunctions : Conduction normal to junction: I-V models and characteristics. Theory of graded layers; creation of internal carrier-specific fields.
  • Quantum Effect Structures : Quantum wells: theory, fabrication, observation (verification), and application. Quantum wires and dots.
  • Quantum Effect Structures (contd.) : Coupled quantum structures: super lattices. Resonant tunneling: RTD structure and concept. I-V theory. Related devices and applications: RTD-load logic, memory cells.
  • Epitaxy : Concerns / constraints — lattice-matched systems; strained layers (pseudomorphic) — limits of thickness; impact of strain on bands, properties.
  • Epitaxy (contd.) : Techniques — MOCVD, CBE, MBE (MO, GS, & SS).
  • MESFETs : Basic concept, models for terminal characteristics; accounting for velocity saturation. Dynamic models: large signal switching transients; small signal, high f models. Fabrication sequences; application-specific designs (power, digital, low noise microwave).
  • MESFET Digital Logic Families : Performance criteria for logic. Logic families: normally-on logic (FL, BFL, SDFL); normally-off logic (DCFL); comparison offamilies; examples of fabrication sequences; performance data; state-of-the-art commercially.**
  • HFETs (Doped Channel) : Concept; I-V model including velocity saturation; gate 2 characteristics; output conductance; applications of strained layers.
  • HFETs (Modulation Doped) : MODFETs — basic device, theory. Deep level problem (transconductance collapse); pseudomorphic solution. Telecommunications applications — key features: gain, bandwidth, linearly, noise.
  • HBTs : Concept: emitter efficiency, base transport, base resistance, junction capacitance. HJ collector and collector-up refinements. Applications of graded layers: control of HJ spikes; ballistic injection; problems with upper-valley minima.
  • HBTs (contd.) : State-of-the-art commercial HBT technologies (III-V and IV-IV).
  • Light Emission and Absorption : Basic theory. Direct vs. indirect gap. Band-to-band and band-to-impurity transistions.
  • Dielectric Waveguides / Photonic Crystals : Basics of optical cavities and waveguides. Photonic crystal concepts, structures, issues.
  • Light Emitting Diodes : LEDs — structure, materials, characteristics (i-v, l-i, l-l), performance. Light extraction, current spreading, photon recycling.
  • LEDs (contd.) : Applications in displays and illumination — considerations, current practice, recent commercial developments.
  • Laser Diodes : Feedback and stimulated emission. Cavity design; double heterostructure concept. Quantum well, wire, dot active regions. Strained layers; pseudomorphic active regions.
  • Laser Diodes (contd.) : In-plane lasers: double heterostructure, quantum well, multi-contact, surface emitting. Vertical cavity surface emitting lasers (VCSELs). Modulation and control of emission. New structures and material systems including blue-green lasers and cascade lasers.
  • Detectors : Structure and theory of basic types: p-i-n (conventional and unicarrier), APD, Schottky diode, m-s-m; resonant cavity concepts.
  • Detectors (contd.) : Vertical vs. in-plane geometries. Quantum well intersubband photodetectors.
  • Modulators : Multiple quantum well structures, quantum confined Stark effect; SEED. Waveguide couplers, switches, modulators.
  • OEICs (contd.) : Approaches to integration and current state-of-the-art. Epitaxial stacks, multiple-epitaxial runs, epitaxy on processed electronics (GaAs-on-Si, GaAs-on-GaAs, Si-on-GaAs). Bonding. Hybrid integration. Self-assembly.
  • Quantum Effect Devices : Electron waveguides, single electron transistors, etc.
  • Device Research Conference Preview / Industrial Overview : What’s new and exciting this year in research and in the marketplace?

Readings

  • Shur, M. S. Physics of Semiconductor Devices . Englewood Cliffs, NJ: Prentice-Hall, 1990. ISBN: 0136664962.
    Listed reading
  • Swaminathan, V., and A. T. Macrander. Materials Aspects of GaAs and InP Based Structures. Englewood Cliffs, NJ: Prentice-Hall, 1991. ISBN: 0133468267.
    Listed reading
  • Sze, S. M. Physics of Semiconductor Devices. 2nd ed. New York, NY: Wiley, 1981. ISBN: 047109837X.
    Listed reading
  • ———. Semiconductor Devices, Physics, and Technology . New York, NY: Wiley, 1985. ISBN: 0471874248.
    Listed reading
  • Sze, S. M., ed. High Speed Semiconductor Devices. New York, NY: Wiley, 1990. ISBN: 0471623075.
    Listed reading
  • Adachi, Sadao. Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP . New York, NY: John Wiley & Sons, 1992. ISBN: 0471573299.
    Listed reading
  • Berger, Lev I. Semiconductor Materials . Boca Raton: CRC Press, 1996. ISBN: 0849389127.
    Listed reading
  • Madelung, Otfried. Physics of III-V Compounds . New York, NY: John Wiley & Sons, 1964. ISBN: 0471563161.
    Listed reading
  • ———. Semiconductors - Basic Data . 2nd rev. ed. Berlin: Springer, 1996. ISBN: 3540608834.
    Listed reading
  • Swaminathan, V., and A. T. Macrander. Materials Aspects of GaAs and InP Based Structures . Englewood Cliffs, NJ: Prentice Hall, 1991. ISBN: 0133468267.
    Listed reading
  • Madelung, O., H. Weiss, and M. Schultz, eds. Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology. Group III: Crystal and Solid State Physics. Volume 17, Subvolume A: Physics of Group IV Elements and III-V Compounds . Berlin: Springer, 1982.
    Listed reading
  • ———. Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology. Group III: Crystal and Solid State Physics. Volume 17, Subvolume B: Physics of II-VI and I-VII Compounds, Semi-Magnetic Semiconductors . Berlin: Springer, 1982.
    Listed reading
  • ———. Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology. Group III: Crystal and Solid State Physics. Volume 22, Subvolume A: Intrinsic Properties of Group IV Elements and III-V, II-VI, and IV Compounds . Berlin: Springer, 1987.
    Listed reading
  • Jelenski, A. “Gallium Nitride-New Material for Microwave and Optoelectronics.” Conference Proceedings of the IEEE: 12th International Conference on Microwaves and Radar. MIKON 1998 4 (1998): 147-58.
    Listed reading
  • Ramos, L. E., L. K. Teles, L. M. R. Scolfaro, J. L. P. Castineira, A. L. Rosa, and J. R. Leite. “Structural, Electronic, and Effective-Mass Properties of Silicon and Zinc-Blende Group-III Nitride Semiconductor Compounds.” Physical Review B: Condensed Matter and Materials Physics 63, no. 16 (2001). 165210/1-1015.
    Listed reading
  • Hess, K. “Diffusive Transport and Thermionic Emission: Appendix G.” In *Advanced Theory of Semiconductor Devices. * New York, NY: Prentice-Hall, 1988. ISBN: 0780334795.
    Listed reading
  • Shur, M. S. Physics of Semiconductor Devices. Englewood Cliffs, NJ: Prentice-Hall, 1990, chapter 2 and section 2.9. ISBN: 0136664962. [General Discussion]
    Listed reading
  • Singh, J. Semiconductor Devices: An Introduction . New York, NY: McGraw-Hill, 1994, chapter 6, Section 6.2. ISBN: 0070576254. [General Discussion]
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  • Smith, R. A. Semiconductors. Cambridge, UK: Cambridge Univeristy Press, 1961, section 8.12. ASIN: B0007J3LR8. [General Discussion]
    Listed reading
  • Sze, S. M. Physics of Semiconductor Device . 2nd. ed. New York, NY: Wiley, 1981. Chapter 5. ISBN: 047109837X. [Very Complete Discussion]
    Listed reading
  • ———. Semiconductor Devices, Physics, and Technology . New York, NY: Wiley, 1985. Section 5.1. ISBN: 0471874248. [General Discussion]
    Listed reading
  • Yang, E. S. “Thermionic Emission: Appendix A.” In Microelectronic Devices. New York, NY: McGraw-Hill, 1988. ISBN: 0070722382.
    Listed reading
  • Cook, P., E. Martinez, J. Tantillo, and F. L. Schuermeyer. “Band Edge Alignment in Heterstructures.” Applied Physics Letters 55, no. 18 (October 1989): 1877-1878.
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  • Chua, S. J., W. J. Fan, S. J. Xu, and X. H. Zhang. “Band Offsets at the InAlGaAs/InAlAs (001) Heterostructures Lattice Matched to an InP Substrate.” Journal of Applied Physics 83, no. 11 (June 1998): 5852-5854.
    Listed reading
  • Huijser, A., J. Van Laar, and T. L. Van Rooy. “Electronic Surface Properties of UHV-Cleaved III-V Compounds.” Surface Science 62 (1977): 472-486.
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  • Morris, L. L., and R. H. Williams. “Measurement of Conduction Band Offsets throughSchottky Diode Transport Measurements.” Applied Physics Letters 63, no. 3 (January 1993): 291-293.
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  • Garcia, J. Ch. “Potential Prospects of CBE Technology Compared to MBE as Production Tool for Microwave Devices.” Journal of Crystal Growth 188 (1998): 343-348.
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  • Fitzgerald, E. A. “Dislocation in Strained-layer Epitaxy: Theory, Experiment, and Applications.” Materials Science Reports 7 (1991): 87-142. A good overview of the topic.
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  • Chyi, Jen-Inn, Jia-Lin Shieh, Chia-Song Wu, Ray-Ming Lin. Jen-Wei Pan, Yi-Jen Chan, and Chun-Hong Lin. “Characteristics of In 0.3 Ga 0.7 As/In 0.29 Al 0.71 As Heterostructures Grown on GaAs using InAlAs Buffers.” Jpn J Appl Phys 33 (1994): L1574-L1576. An example of step grading.
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  • Zaknoune, M., Y. Cordier, S. Bollaert, D. Ferre, D. Theron, and Y. Crosnier. “0.1µm High Performance Metamorphic In 0.32 Al 0.68 As/In 0.33 Ga 0.67 As HEMT on GaAs Using Inverse Step InAlAs Buffer.” Electronics Lett 35 (1999): 1670-1671. An example of linear grading.
    Listed reading
  • Mohammad, S. N., and H. Morkoc. “Progress and Prospects of Group-III Nitride Semiconductors.” Progress in Quantum Electronics 20 (1996): 361-525. A good overall review of the field.
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  • Monemar, B., and G. Pozina. “Group III-nitride Based Hetero and Quantum Structures.” Progress in Quantum Electronics 24 (2000): 239-290. Another good review article on the wide bandgap nitrides.
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  • Bollaert, S., Y. Cordier, M. Zaknoune, T. Parenty, H. Happy, and A. Cappy. “HEMT’s Capability for Millimeter-wave Applications.” Annals of Telecommunications 56 (2001): 15-26.
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  • Van Hove, M., J. Finders, K. van der Zanden, W. De Raedt, M. Van Rossum, Y. Baeyens, D. Schreurs, and R. Menozzi. “Material and Process Related Limitations of InP HEMT Performance.” Materials Science and Engineering B B44 (1997): 311-315.
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  • Parikh, P. A., P. M. Chavarkar, and U. K. Mishra. “GaAs MESFETs on a Truly Insulating Buffer Layer: Demonstration of the GaAs on Insulator Technology.” IEEE Elect Dev Lett. 18 (1997): 111-113.
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  • Tzeng, S. Y., M. J. Cich, R. Zhao, H. Feick, and E. R. Weber. “Generation-recombination Low-frequency Noise Signatures in GaAs Metal-semiconductor Field Effect Transistors on Laterally Oxidized AlAs.” Appl Phys Lett 82 (2001): 1063-1065.
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  • Leyronas, X. and M. Combescot. “Quantum Wells, Wires, and Dots with Finite Barrier: Analytical Expressions for Bound States.” Solid State Comm 119 (2001): 631-635.
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  • Houston, P. A.. “High-frequency Heterojunction Bipolar Transistor Device Design and Technology.” Electronics and Communication Engineering Journal 12 (October 2000): 220-228.
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  • Delage, S. L. “Heterojunction Bipolar Transistors for Millimeter Waves Applications: Trends and Achievements.” Annals of Telecommunications 56 (2001): 5-14.
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  • Pedrotti, K., K. Runge, S. Beccue, R. Pierson, A. Price, D. Wu, R. Yu, P. Zampardi, and K. C. Wang. “High-speed HBT Technologies for Optical Communication.” In High-Speed Semiconductor Lasers for Communication. Edited by N. S. Kwong, and R. Nagarajan. Proceedings of SPIE 3018 (1997), SPIE, Bellingham, WA. pp. 198-209, TA1700.H54.
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  • Hurkx, G. A. M. “The Relevance of f T and f max for the Speed of a Bipolar CE Amplifier Stage.” IEEE Trans Electron Dev 44, no. 197. pp. 775-781.
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  • Ashburn, P. “Materials and Technology Issues for SiGe Heterojunction Bipolar Transistors.” Materials Science in Semiconductor Processing 4 (2001): 521-527. A fairly current overview of Si HBTs.
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  • Paul, D. J. “Silicon Germanium Heterostructures in Electronics: The Present and the Future.” Thin Solid Films 321 (1998): 172-180. FETs as well as HBTs. Older but still relevant.
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  • Robertson, I. D., and S. Lucyszyn. RFIC and MMIC Design and Technology. UK: Institute of Electrical Engineers, Herts, 1988. Older reference but still relevant in general issues and even fabrication technology. Deals with FETs and HBTs.
    Listed reading
  • Coldren, L. A., and S. W. Corzine. Diode Lasers and Photonic Integrated Circuits . New York, NY: Wiley Interscience, 1995. ISBN: 0471118753.
    Listed reading
  • Roencher, E., and B. Vorge. Optoelectronics . Cambridge, UK: Cambridge University Press, 2002. ISBN: 0521778131.
    Listed reading
  • Chang, Shun Lien. Physics of Optoelectronic Devices . New York, NY: John Wiley, 1995. ISBN: 0471109398.
    Listed reading
  • Bhattacharya, Pallab. Semiconductor Optoelectronic Devices . 2nd ed. Upper Saddle River, NJ: Prentice-Hall, 1997. ISBN: 0134956567.
    Listed reading
  • Varshni, Y. P. “Band-to-Band Radiative Recombination in Groups IV, VI, and III-V Semiconductors(I).” Phys Stat Sol 19 (1967): 459-514. An extensive overview of optical processes in semiconductors, with emphasis on radiative recombination.
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  • Beattle, A. R., P. T. Landsberg. “Auger Effect in Semiconductors.” Proceedings of the Royal Society of London, Series A: Mathematical and Physical Sciences 249 (1959): 16-29. A classic treat is on Auger recombination.
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  • Takeshima, Masumi. “Auger Recombination in InAs, GaSb, InP, and GaAs.” J Appl Phys 43 (1972): 4114-4119. Useful information (material parameters and theory) on Auger recombination in some important binary compounds.
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  • Keevers, M. J., Green, M. A. “Efficiency Improvements of Silicon Solar Cells by the Impurity Photovoltaic Effect.” J Appl Phys 75 (1994): 4022-4031. An interesting proposal for using mid-gap levels to improve device performance (see also the next reference.)
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  • Luque, A., A. Martf. “Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels.” Physical Review Letters 78 (1997): 5014-5017.
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  • Adachi, S. “Model Dielectric Constants of GaP, GaAs, SaSb, InP, InAs, InSb.” Physical Review B 35 (1987): 7454-7463.
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  • ———. “Optical Properties of In 1-x Ga x As y P 1-y Alloys.” Physical Review B 39 (1989): 12612-12621.
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  • ———. “Optical Dispersion Relations for GaP, GaAs, SaSb, InP, InAs, InSb, Al x Ga 1-x As, and In 1-x Ga x As y P 1-y. ” J Appl Phys 66 (1989): 6030-6040.
    Listed reading
  • Linnik, M., and A. Christou. “Calculations of Optical Properties for Quanternary III-V Semiconductor Alloys in the Transparent Region and Above (0.2 - 4.0 eV).” Physica B 318 (2002): 140-161.
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  • Forchel, A., M. Kamp, Reithmaier, et al. “Photonic Crystals for Optoelectronic Devices.” In Physics and Simulation of Optoelectronic Devices IX . Edited by Yasuhiko Arakawa, Peter Blood, and Marek Osinski. ISBN: 0819439614. Proceedings of the SPIE 4283 (2001): 406-414.
    Listed reading
  • Krauss, T. F., and R. M. De La Rue. “Photonic Crystals in the Optical Regime - Past, Present, and Future.” Progress in Quantum Electronics 23 (1999): 51-59.
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  • Yablonovitch, E. “Inhibited Spontaneous Emission in Solid-State Physics and Electronics.” Physical Review Lett 58 (1987): 2059-2062.
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  • John, S. “Strong Localization of Photons in Certain Disordered Dielectric Superlattices.” Physical Review Lett 58 (1987): 2486-2489.
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  • Meade, R. D., A. Devenyi, J. D. Joannopoulos, et al. “Novel Applications of Photonic Band Gap Materials: Low-loss Bends and High G Cavities.” J Appl Phys 75 (1994): 4753-4755.
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  • Happ., T. D., M. Kamp, F. Klopf, J. P. Reithmaier, and A. Forchel. “Bent Laser Cavity Based on 2D Photonic Crystal Waveguide.” Electronics Letters 36 (2000): 324-325.
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  • Mekis A., J. C. Chen, and I. Kurland, et al. “High Transmission through Sharp Bends in Photonic Crystal Waveguides.” Physical Review Lett 77 (1996): 3787-3790.
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  • Cheng, C. C., and A. Scherer. “Lithographic Band Gap Tuning in Photonic Bandgap Crystals.” J Vac Sci Technol B 14 (1996): 4110-4114.
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  • Smith, C. J. M., H. Benisty, S. Oliver, et al. “Low-Loss Channel Waveguides with two-dimensional Photonic Crystal Boundaries.” Appl Phys Let 77 (2000): 2813-2815.
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  • Joannopolous, J. D., R. D. Meade, and J. N. Winn. Photonic Crystals: Molding theFlow of Light. Princeton, NJ: Princeton University Press, 1995.
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  • Bergh, A. A. Light Emitting Diodes. Oxford, UK: Clarendon Press, 1976. ISBN: 0198593171.
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  • Gillesen, K., and W. Schairer. Light Emitting Diodes: An Introduction. Upper Saddle River, NJ: Prentice-Hall, 1987, ISBN: 0135365333.
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  • Schubert, E. F. Light Emitting Diodes . Cambidge, UK: Cambridge University Press, 2003. ISBN: 0521533511.
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  • Delbeke, D., et al. “High Efficiency Semiconductor Resonant-cavity Light-emitting diodes: A Review.” IEEE J on Selected Topics on Quantum Electronics 8 (2002): 189-206.
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  • Royo, P., et al. “Analytical Calculation of the Extraction Efficiency of Micro-cavity light-emitting Diodes for Display and Fiber Coupling Applications.” IEEE J on Selected Topics on Quantum Electronics 8 (2002): 207-218.
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  • Ryu, H., et al. “Enhancement of Light Extraction from Two-dimensional Photonic Crystal Slab Structures.” IEEE J. on Selected Topics on Quantum Electronics 8 (2002): 231-237.
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  • Rattier, M., et al. “Toward Ultra high-efficiency Aluminum Oxide Microcavity light-emitting Diodes: Guided Mode Extraction by Photonic Crystals.” IEEE J on Selected Topics on Quantum Electronics 8 (2002): 238-247.
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  • Mukai, T. “Recent Progress in Group-III Nitride Light-emitting Diodes.” IEEE J on Selected Topics on Quantum Electronics 8 (2002): 264-270.
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  • Han, J., and A. V. Nurmikko. “Advances in AlGaInN Blue and Ultraviolet Light Emitters.” IEEE J Selected Topics on Quantum Electronics 8 (2002): 289-297.
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  • Orton, J. W., and C. T. Foxton. “Group III Nitride Semiconductors for Short Wavelength Light-emitting Devices.” Rev Prog Phys 61 (1998): 1-75.
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  • Steigerwald, D. A., et al. “Illumination with Solid State Lighting Technology.” IEEE J on Selected Topics on Quantum Electronics 8 (2002): 310-320.
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  • Muthu, S., et al. “Red, Green, and Blue LEDs for White Light Illumination.” IEEE J on Selected Topics on Quantum Electronics 8 (2002): 333-338.
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  • Ronda, C. R., T. Juestel, and H. Nikol. “Rare Earth Phosphors: Fundamentals and Applications.” Journal of Alloys and Compounds (1998): 275-277 and 669-76.
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  • Patel, N. K., S. Cina, and J. H. Burroughes. “High-efficiency Organic Light-emitting Diodes.” IEEE J on Selected Topics on Quantum Electronics 8 (2002): 346-61.
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  • Tessler, N. “Lasers Based on Semiconducting Organic Materials.” Advanced Materials 11, no. 5 (1999): 363-70.
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  • Heeger, A. J. “Light Emission from Semiconducting Polymers: Light-emitting Diodes, Light-emitting Electrochemical Cells, Lasers and White Light for the Future.” Solid-State-Communications 107 (1998): 673-679.
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  • Kalinowski, J. “Electroluminescence in Organics.” Journal of Physics D Applied Physics 32 (1999): R179-249.
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  • Schroder, D. K. “Carrrier Lifetimes in Silicon.” IEEE Trans. on Electron Dev. 44 (1997): 160-170.
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  • Moon, R. L. “MOVPE: Is There Any Other Technology for Optoelectronics.” Journal of Crystal Growth 170 (1997): 1-10.
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  • Coldren, L. A., and S. W. Corzine. Diode Lasers and Photonic Integrated Circuits. New York, NY: Wiley, 1995. ISBN: 0471118753. The best reference on lasers; the most up to date and comprehensive on in-plane lasers; more limited on VCSELs. For VCSELs see the references below.
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  • Iga, K. “Vertical-Cavity Surface-Emitting Laser - Progress and Prospects.” IEICE Trans Electron E85-C, no. 1 (2002): 10-20. Iga is credited with inventing, or at least popularizing, the VCSEL.
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  • Chang, C. H., L. Chrostowski, and C. J. Chang-Hasnain. “Parasitics and Design Considerations on Oxide-Implant VCSELs.” IEEE Photonics Technology Letters 13, no. 12 (2001): 1274-1276.
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  • Gustavsson, J. S., J. A. Vukusic, J. Bengtsson, and A. Larsson. “A Comprehensive Model for Modal Dynamics of Vertical-Cavity Surface-Emitting Lasers.” IEEE J Quant Electr 38, no. 2 (2002): 203-212. A good reference on VCSEL small and large signal operation. Complements the material in Coldren and Corzine above.
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  • SPIE Proceedings Vol. 4286, published in 2001 and Vol. 4649, published in 2002 have some good VCSEL articles, including: Note: SPIE holds annual conferences reviewing many topics in the general area of optoelectronics and publishes the proceedings. These proceedings are often good places to start a search for references.
    Listed reading
  • Stevens, R., et al. “Quest for Very High-speed VCSELs: Pitfalls and Clues.” Vertical-Cavity Surface-Emitting Lasers V. Edited by Kent D. Choquette, and Chun Lei. Proceedings of SPIE 4286 (2001): 71-79.
    Listed reading
  • Wasserbauer, J. G., et al. “High Speed VCSELs for Next-Generation Telecommunications Links.” Vertical-Cavity Surface-Emitting Lasers V. Edited by Kent D. Choquette, and Chun Leis. Proceedings of SPIE 4286 (2001): 80-95.
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  • Grabherr, M., D. Wiedenmann, R. King, R. Jager, and B. Schneider. “Speed it Upto 10 Gb/s and Flip Chip it: VCSELs Today.” Vertical-Cavity Surface-Emitting Lasers VI. Edited by Chun Lei, and Sean P. Kilcoyne. Proceedings of SPIE 4649 (2002): 11-18.
    Listed reading
  • Zhang, X., et al. “Advancements in the Design and Production of VCSELs at AXT.” Vertical-Cavity Surface-Emitting Lasers VI. Edited by Chun Lei, and Sean P. Kilcoyne. Proceedings of SPIE 4649 (2002): 111-120.
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  • Eitel, S., et al. “Multimode VCSELs for High Bit-rate and Transparent Low-costfiber-optic Links.” Vertical-Cavity Surface-Emitting Lasers VI. Edited by Chun Lei, and Sean P. Kilcoyne. Proceedings of SPIE 4649 (2002): 183-190.
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  • Unold, H. J., et al. “Single-mode VCSELs.” In Vertical-Cavity Surface-Emitting Lasers VI. Edited by Chun Lei, and Sean P. Kilcoyne. Proceedings of SPIE 4649 (2002): 218-229.
    Listed reading
Sources