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6.774

Physics of Microfabrication: Front End Processing

Graduate · Historical course

Fall 2004

This course is offered to graduates and focuses on understanding the fundamental principles of the "front-end" processes used in the fabrication of devices for silicon integrated circuits. This includes advanced physical models and practical aspects of major processes, such as oxidation, diffusion, ion implantation, and epitaxy. Other topics covered include: high performance MOS and bipolar devices including ultra-thin gate oxides, implant-damage enhanced diffusion, advanced metrology, and new materials such as Silicon Germanium (SiGe).

Readings

  • Plummer, James, Michael Deal, and Peter Griffin. Silicon VLSI Technology: Fundamentals, Practice and Modeling. Upper Saddle River, NJ: Prentice Hall, 2000. ISBN: 0130850373.
    Required
  • This section contains readings that were used during the course. The book by Plummer, Deal and Griffin is the only required text but the other reading material is useful for obtaining a better understanding of the course topics. The readings for each session from the required textbook are listed below in the table. ↗
    Listed reading
  • Plummer, James, Michael Deal, and Peter Griffin. Silicon VLSI Technology: Fundamentals, Practice and Modeling . Upper Saddle River, NJ: Prentice Hall, 2000. ISBN: 0130850373.
    Listed reading
  • Wolf, Stanley, and Richard Tauber. Silicon Processing for the VLSI Era. 2nd ed. Sunset Beach, CA: Lattice Press, 1999. ISBN: 0961672161.
    Listed reading
  • Sze, Simon. VLSI Technology . 2nd ed. New York, NY: McGraw-Hill, 1988. ISBN: 0070627355.
    Listed reading
  • Campbell, Stephen. The Science and Engineering of Microelectronic Fabrication . 2nd ed. New York, NY: Oxford University Press, 2001. ISBN: 0195136055.
    Listed reading
  • Vossen, John, and Werner Kern, eds. Thin Film Processes . Burlington, MA: Academic Press, 1978. ISBN: 0127282505.
    Listed reading
  • Vossen, John, and Werner Kern. Thin Film Processes . Burlington, MA: Academic Press, 1991. ISBN: 0127282513.
    Listed reading
  • Mayer, James W., and Sylvanus S. Lau. Electronic Materials Science: For Integrated Circuits in Si and GaAs . New York, NY: Macmillan, 1990. ISBN: 0023781408.
    Listed reading
  • Pierret, Robert, and George W. Neudeck. Modular Series on Solid State Devices . Vol. 1-5. Upper Saddle River, NJ: Prentice Hall, 1987, 89, and 90. ISBN: 0201122979.
    Listed reading
  • Pierret, Robert. Advanced Semiconductor Fundamentals . Upper Saddle River, NJ: Prentice Hall, 2003. ISBN: 013061792X.
    Listed reading
  • Taur, Yuan, and Tak H. Ning. Fundamentals of Modern VLSI Devices . Cambridge, UK: Cambridge University Press, 1998. ISBN: 0521559596.
    Listed reading
  • IEEE Transactions on Electron Devices (published monthly)
    Listed reading
  • Applied Physics Letters
    Listed reading
  • Journal of Applied Physics
    Listed reading
  • IEEE IEDM Conference Proceedings (published each December)
    Listed reading
  • Lec #: 2 · TOPICS: Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers · READINGS: Chapter 3
    Reading assignment
  • Lec #: 4 · TOPICS: Wafer Cleaning and Gettering (cont.) · READINGS: Chapter 4
    Reading assignment
  • Lec #: 6 · TOPICS: Oxidation and the Si/SiO 2 Interface: Deal/Grove Model, Thin Oxide Models · READINGS: Chapter 6
    Reading assignment
  • Lec #: 7 · TOPICS: Oxidation and the Si/SiO 2 Interface: 2D Effects, Doping Effects, Point Defects · READINGS: Chapter 6
    Reading assignment
  • Lec #: 8 · TOPICS: Dopant Diffusion - Need for Abrupt Profiles, Fick’s Laws, Simple Analytic · READINGS: Chapter 7
    Reading assignment
  • Lec #: 9 · TOPICS: Dopant Diffusion - Numerical Techniques in Diffusion, E Field Effects · READINGS: Chapter 7
    Reading assignment
  • Lec #: 10 · TOPICS: Dopant Diffusion - Fermi Level Effects, I and V Assisted Diffusion · READINGS: Chapter 7
    Reading assignment
  • Lec #: 11 · TOPICS: Dopant Diffusion - Review Atomic Scale Models, Profile Measurement Techniques · READINGS: Chapter 7
    Reading assignment
  • Lec #: 12 · TOPICS: Ion Implantation and Annealing - Analytic Models and Monte Carlo · READINGS: Chapter 8
    Reading assignment
  • Lec #: 13 · TOPICS: Ion Implantation and Annealing - Physics of E Loss, Damage, Introduction to TED · READINGS: Chapter 8
    Reading assignment
  • Lec #: 14 · TOPICS: Transient Enhanced Diffusion (TED) - +1 Model, (311) Defects and TED Introduction · READINGS: Chapter 8
    Reading assignment
  • Lec #: 15 · TOPICS: Transient Enhanced Diffusion (TED) - Simulation Examples, TED Calculations, RSCE in detail · READINGS: Chapter 8
    Reading assignment
  • Lec #: 17 · TOPICS: Thin Film Deposition and Epitaxy - Introduction to CVD, Si Epitaxial Growth · READINGS: Chapter 9
    Reading assignment
  • Lec #: 18 · TOPICS: Thin Film Deposition and Epitaxy - CVD Examples and PVD · READINGS: Chapter 9
    Reading assignment
  • Lec #: 19 · TOPICS: Thin Film Deposition and Epitaxy - Modeling Topography of Deposition · READINGS: Chapter 9
    Reading assignment
  • Lec #: 20 · TOPICS: Etching - Introduction · READINGS: Chapter 10
    Reading assignment
  • Lec #: 21 · TOPICS: Etching - Poly Gate Etching, Stringers, Modeling of Etching · READINGS: Chapter 10
    Reading assignment
  • Lec #: 22 · TOPICS: Silicides, Device Contacts, Novel Gate Materials · READINGS: Chapter 11
    Reading assignment
Sources