— Principles of Device Physics II

Prerequisites & course information

Course Description: Electrical properties, designs, models and advanced concepts for MOS, Bipolar, and Junction Field-Effect Transistors, including scaling, minority-carrier distributions, non-ideal effects, and device fabrication methods. MESFET and heterojunction bipolar transistors (HBTs). Fundamentals of solar cells, photodetectors, LEDs and semiconductor lasers. Learning Activities: Lecture 3 hour(s), Discussion 1 hour(s). Grade Mode: Letter. General Education: Science & Engineering (SE). Learning Activities: Lecture 3 hour(s), Discussion 1 hour(s). Grade Mode: Letter. General Education: Science & Engineering (SE).