— Advanced Integrated Circuits Fabrication
Fabrication processes for CMOS VLSI. Laboratory projects examine deposition of thin films, ion implantation, process simulation, anisotropic plasma etching, sputter metallization, and C-V analysis. Topics include isolation, projection alignment, epilayer growth, thin gate oxidation, and rapid thermal annealing.
Topics
- isolation
- projection alignment
- epilayer growth
- thin gate oxidation
- and rapid thermal annealing
Topics explicitly listed in official catalogue description
Prerequisites & course information
Course Description: Fabrication processes for CMOS VLSI. Laboratory projects examine deposition of thin films, ion implantation, process simulation, anisotropic plasma etching, sputter metallization, and C-V analysis. Topics include isolation, projection alignment, epilayer growth, thin gate oxidation, and rapid thermal annealing. Learning Activities: Lecture 2 hour(s), Laboratory 3 hour(s). Enrollment Restriction(s): Restricted to Electrical, Computer, and Electrical/Materials Science majors and Electrical Engineering graduate students; non-majors accommodated when space available. Grade Mode: Letter. General Education: Science & Engineering (SE). Learning Activities: Lecture 2 hour(s), Laboratory 3 hour(s). Enrollment Restriction(s): Restricted to Electrical, Computer, and Electrical/Materials Science majors and Electrical Engineering graduate students; non-majors accommodated when space available. Grade Mode: Letter. General Education: Science & Engineering (SE).
Sources
- Course catalogue ↗2026-2027