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EEC 146B

— Advanced Integrated Circuits Fabrication

(3 units)

Fabrication processes for CMOS VLSI. Laboratory projects examine deposition of thin films, ion implantation, process simulation, anisotropic plasma etching, sputter metallization, and C-V analysis. Topics include isolation, projection alignment, epilayer growth, thin gate oxidation, and rapid thermal annealing.

Topics

Topics explicitly listed in official catalogue description

Prerequisites & course information

Course Description: Fabrication processes for CMOS VLSI. Laboratory projects examine deposition of thin films, ion implantation, process simulation, anisotropic plasma etching, sputter metallization, and C-V analysis. Topics include isolation, projection alignment, epilayer growth, thin gate oxidation, and rapid thermal annealing. Learning Activities: Lecture 2 hour(s), Laboratory 3 hour(s). Enrollment Restriction(s): Restricted to Electrical, Computer, and Electrical/Materials Science majors and Electrical Engineering graduate students; non-majors accommodated when space available. Grade Mode: Letter. General Education: Science & Engineering (SE). Learning Activities: Lecture 2 hour(s), Laboratory 3 hour(s). Enrollment Restriction(s): Restricted to Electrical, Computer, and Electrical/Materials Science majors and Electrical Engineering graduate students; non-majors accommodated when space available. Grade Mode: Letter. General Education: Science & Engineering (SE).

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