INTEGRATED CIRCUIT DESIGN

Prerequisites & course information

Requisites: E C E 335 , graduate/professional standing, or member of Engineering Guest Students Repeatable for Credit: No Last Taught: Fall 2026 Learning Outcomes: 1. Solve problems related to operation and fabrication of semiconductor devices (diodes, BJTs, MOSFETs) Audience: Undergraduate 2. Draw semiconductor band diagrams and apply these drawings to explain effects that appear at interfaces between materials such as differently doped semiconductors, semiconductor-metal interface Audience: Undergraduate 3. Analyze advanced effects that appear in MOSFETs when their size is reduced to nanometer scale Audience: Undergraduate 4. Develop and design device physics models using simulation platform such as TCAD Audience: Undergraduate Learning Outcomes: 1. Solve problems related to operation and fabrication of semiconductor devices (diodes, BJTs, MOSFETs) Audience: Undergraduate 2. Draw semiconductor band diagrams and apply these drawings to explain effects that appear at interfaces between materials such as differently doped semiconductors, semiconductor-metal interface Audience: Undergraduate 3. Analyze advanced effects that appear in MOSFETs when their size is reduced to nanometer scale Audience: Undergraduate 4. Develop and design device physics models using simulation platform such as TCAD Audience: Undergraduate